The formation of a Schottky barrier: Na on GaAs(110)

Heinemann, Martina; Scheffler, Matthias

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The formation of a Schottky barrier: Na on GaAs(110)

Heinemann, M., & Scheffler, M. (1994). The formation of a Schottky barrier: Na on GaAs(110). In B. Lengeler, H. Lüth, W. Mönch, & J. Pollmann (Eds.), Formation of Semiconductor Interfaces (pp. 297-300). Singapore: World Scientific.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-210F-1 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-AB8E-9

Genre: Conference Paper

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Creators:
Heinemann, Martina¹, Author
Scheffler, Matthias¹, Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1994

Publication Status: Issued

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: Peer

Identifiers: eDoc: 2215

Degree: -

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Title: 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI)

Place of Event: Jülich, Germany

Start-/End Date: 1993-06-14 - 1993-06-18

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Title: Formation of Semiconductor Interfaces

Source Genre: Proceedings

Creator(s):
Lengeler, Bruno, Editor
Lüth, Hans, Editor
Mönch, Winfried, Editor
Pollmann, Johannes, Editor

Affiliations:
-

Publ. Info: Singapore : World Scientific

Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 297 - 300 Identifier: ISBN: 9810215592