Prediction of Weak Topological Insulators in Layered Semiconductors

Yan, B.; Müchler, L.; Felser, C.

doi:10.1103/PhysRevLett.109.116406

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Prediction of Weak Topological Insulators in Layered Semiconductors

Yan, B., Müchler, L., & Felser, C. (2012). Prediction of Weak Topological Insulators in Layered Semiconductors. Physical Review Letters, 109(11): 116406, pp. 116406-1-116406-5. doi:10.1103/PhysRevLett.109.116406.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-203C-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-203D-9

Genre: Journal Article

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Creators:
Yan, B.¹, Author
Müchler, L.², Author
Felser, C.³, Author

Affiliations:
1Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427
2Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429

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Language(s): eng - English

Dates: Date issued: 2012-09-13

Publication Status: Issued

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Identifiers: eDoc: 619246
DOI: 10.1103/PhysRevLett.109.116406

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Title: Physical Review Letters

Source Genre: Journal

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Pages: - Volume / Issue: 109 (11) Sequence Number: 116406 Start / End Page: 116406-1 - 116406-5 Identifier: ISSN: 0031-9007