Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films

Köhler, A.; Knez, I.; Ebke, D.; Felser, C.; Parkin, S. S. P.

doi:10.1063/1.4825278

Local TagsRelease HistoryDetailsSummary

Loss of anisotropy in strained ultrathin epitaxial L1₀ Mn-Ga films

Köhler, A., Knez, I., Ebke, D., Felser, C., & Parkin, S. S. P. (2013). Loss of anisotropy in strained ultrathin epitaxial L1₀ Mn-Ga films. Applied Physics Letters, 103(16): 162406, pp. 1-4. doi:10.1063/1.4825278.

Item is Released

show all hide all

Basic

show hide

Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-1A90-5 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-52B4-2

Genre: Journal Article

Files

show Files

Locators

show

Creators

show

hide

Creators:
Köhler, A.¹, Author
Knez, I., Author
Ebke, D.², Author
Felser, C.³, Author
Parkin, S. S. P., Author

Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425
2Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863430
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429

Content

show

hide

Free keywords: -

Abstract: We have investigated the magnetization and loss of anisotropy in ultrathin strained and unstrained Mn-Ga films at room temperature. Two Mn-Ga compositions, one of which is doped with Co, were grown on Cr buffered MgO (001) substrates. Films with a thickness below 10 nm are highly strained and the ratio c/a vs. thickness is depending on composition. The perpendicular magnetic anisotropy is shown to be drastically reduced with decreasing thickness and increasing strain. These findings should be considered when generalizing and downscaling results obtained from films > 20 nm. The strain can effectively be reduced by introducing an additional Pt buffer and thus maintaining a high perpendicular magnetic anisotropy for a thickness as low as 6 nm. (C) 2013 AIP Publishing LLC.

Details

show

hide

Language(s): eng - English

Dates: Date issued: 2013-10-14

Publication Status: Issued

Pages: -

Publishing info: -

Table of Contents: -

Rev. Type: -

Identifiers: eDoc: 671339
ISI: 000326148700050
DOI: 10.1063/1.4825278

Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show

hide

Title: Applied Physics Letters

Abbreviation : Appl. Phys. Lett.

Source Genre: Journal

Creator(s):

Affiliations:

Publ. Info: Melville, NY : American Institute of Physics

Pages: - Volume / Issue: 103 (16) Sequence Number: 162406 Start / End Page: 1 - 4 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223