Defects and Defect Reactions in Semiconductor Nitrides

Van de Walle, Chris G.; Neugebauer, Jörg; Stampfl, Catherine; McCluskey, M. D.; Johnson, N. M.

doi:10.12693/APhysPolA.96.613

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Defects and Defect Reactions in Semiconductor Nitrides

Van de Walle, C. G., Neugebauer, J., Stampfl, C., McCluskey, M. D., & Johnson, N. M. (1999). Defects and Defect Reactions in Semiconductor Nitrides. Acta Physica Polonica A, 96(5), 613-627. doi: 10.12693/APhysPolA.96.613.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-1D99-A Version Permalink: https://hdl.handle.net/21.11116/0000-0007-8262-7

Genre: Journal Article

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Creators:
Van de Walle, Chris G., Author
Neugebauer, Jörg¹, Author
Stampfl, Catherine¹, Author
McCluskey, M. D., Author
Johnson, N. M., Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Language(s): eng - English

Dates: Date issued: 1999-11

Publication Status: Issued

Pages: 15

Publishing info: -

Table of Contents: -

Rev. Type: Peer

Identifiers: eDoc: 2453
DOI: 10.12693/APhysPolA.96.613

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Title: Acta Physica Polonica A

Source Genre: Journal

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Publ. Info: Warszawa : Państwowe Wydawnictwo Naukowe

Pages: 15 Volume / Issue: 96 (5) Sequence Number: - Start / End Page: 613 - 627 Identifier: ISSN: 0587-4246
CoNE: https://pure.mpg.de/cone/journals/resource/954925532977