Electron transport and the effect of current annealing in a two-point contacted 
hBN/graphene/hBN heterostructure device

Schnitzspan, Leo; Tries, Alexander; Klaeui, Mathias

doi:10.1063/5.0016471

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Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device

Schnitzspan, L., Tries, A., & Klaeui, M. (2020). Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device. Journal of Applied Physics, 128(12): 124302. doi:10.1063/5.0016471.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0007-468C-D Version Permalink: https://hdl.handle.net/21.11116/0000-0007-468D-C

Genre: Journal Article

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Creators:
Schnitzspan, Leo¹, Author
Tries, Alexander^{1, 2}, Author
Klaeui, Mathias¹, Author

Affiliations:
1Johannes Gutenberg Univ Mainz, Inst Phys, Mainz, Germany, ou_persistent22
2Dept. Bonn: Molecular Spectroscopy, MPI for Polymer Research, Max Planck Society, ou_1800285

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Language(s): eng - English

Dates: Published Online: 2020-09-24Date issued: 2020-09-28

Publication Status: Issued

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Identifiers: DOI: 10.1063/5.0016471

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Title: Journal of Applied Physics

Abbreviation : J. Appl. Phys.

Source Genre: Journal

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Publ. Info: New York, NY : AIP Publishing

Pages: - Volume / Issue: 128 (12) Sequence Number: 124302 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880