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  Quantitative high-resolution electron microscopy studies of strain distribution and defect formation in III-V semiconductor quantum dots

Jin-Phillipp, N. Y., Du, K., & Phillipp, F. (2000). Quantitative high-resolution electron microscopy studies of strain distribution and defect formation in III-V semiconductor quantum dots. In K. Yoshihara (Ed.), Fabrication and Characterization of Atomic Scale Structures. Proceedings of the 5th International Symposium on Advanced Physical Fields (pp. 33-39). Tokyo: National Research Institute for Metals.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-37C4-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-37C6-E
Genre: Conference Paper

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 Creators:
Jin-Phillipp, N. Y.1, Author           
Du, K.1, Author           
Phillipp, F.1, Author           
Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              

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Free keywords: MPI für Metallforschung; Abt. Rühle; ZWE Hochspannungs-Mikroskopie;
 Abstract: -

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Language(s): eng - English
 Dates: 2000
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 46914
 Degree: -

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Title: Fabrication and Characterization of Atomic Scale Structures. 5th International Symposium on Advanced Physical Fields (APF-5)
Place of Event: Tsukuba, Japan
Start-/End Date: 2000-03-06 - 2000-03-09

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Title: Fabrication and Characterization of Atomic Scale Structures. Proceedings of the 5th International Symposium on Advanced Physical Fields
Source Genre: Proceedings
 Creator(s):
Yoshihara, K., Editor
Affiliations:
-
Publ. Info: Tokyo : National Research Institute for Metals
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 33 - 39 Identifier: -