The dangling-bond defect in amorphous silicon: Statistical random versus 
kinetically driven defect geometries

Freysoldt, Christoph; Pfanner, Gernot; Neugebauer, Jörg

doi:10.1016/j.jnoncrysol.2011.12.090

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The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries

Freysoldt, C., Pfanner, G., & Neugebauer, J. (2012). The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries. Journal of Non-Crystalline Solids, 358(17), 2063-2066. doi:10.1016/j.jnoncrysol.2011.12.090.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-27E1-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002E-23E6-9

Genre: Journal Article

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Creators:
Freysoldt, Christoph¹, Author
Pfanner, Gernot¹, Author
Neugebauer, Jörg², Author

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2012-09-01

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 618226
DOI: 10.1016/j.jnoncrysol.2011.12.090

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Title: Journal of Non-Crystalline Solids

Source Genre: Journal

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Publ. Info: Amsterdam : North-Holland

Pages: - Volume / Issue: 358 (17) Sequence Number: - Start / End Page: 2063 - 2066 Identifier: ISSN: 0022-3093
CoNE: https://pure.mpg.de/cone/journals/resource/954925416961