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  A precise optical determination of nanoscale diameters of semiconductor nanowires

Broenstrup, G., Leiterer, C., Jahr, N., Gutsche, C., Lysov, A., Regolin, I., et al. (2011). A precise optical determination of nanoscale diameters of semiconductor nanowires. NANOTECHNOLOGY, 22(38): 385201. doi:10.1088/0957-4484/22/38/385201.

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Broenstrup, G.1, Autor           
Leiterer, C.2, Autor
Jahr, N.2, Autor
Gutsche, C.2, Autor
Lysov, A.2, Autor
Regolin, I.2, Autor
Prost, W.2, Autor
Tegude, F. J.2, Autor
Fritzsche, W.2, Autor
Christiansen, S.1, 3, Autor           
Affiliations:
1Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
2external, ou_persistent22              
3Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              

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Schlagwörter: PHOTOVOLTAIC APPLICATIONS; SILICON; GAAS; GROWTH; ABSORPTION; GERMANIUM; DEVICES; MOVPEScience & Technology - Other Topics; Materials Science; Physics;
 Zusammenfassung: Electrical and optical properties of semiconducting nanowires (NWs) strongly depend on their diameters. Therefore, a precise knowledge of their diameters is essential for any kind of device integration. Here, we present an optical method based on dark field optical microscopy to easily determine the diameters of individual NWs with an accuracy of a few nanometers and thus a relative error of less than 10%. The underlying physical principle of this method is that strong Mie resonances dominate the optical scattering spectra of most semiconducting NWs and can thus be exploited. The feasibility of this method is demonstrated using GaAs NWs but it should be applicable to most types of semiconducting NWs as well. Dark field optical microscopy shows that even slight tapering of the NWs, i.e. diameter variations of a few nanometers, can be detected by a visible color change. Abrupt diameter changes of a few nanometers, as they occur for example when growth conditions vary, can be determined as well. In addition a profound analysis of the elastic scattering properties of individual GaAs NWs is presented theoretically using Mie calculations as well as experimentally by dark field microscopy. This method has the advantage that no vacuum technique is needed, a fast and reliable analysis is possible based on cheap standard hardware.

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Sprache(n): eng - English
 Datum: 2011
 Publikationsstatus: Online veröffentlicht
 Seiten: 9
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000294722400001
DOI: 10.1088/0957-4484/22/38/385201
 Art des Abschluß: -

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Titel: NANOTECHNOLOGY
Genre der Quelle: Zeitschrift
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Affiliations:
Ort, Verlag, Ausgabe: TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND : IOP PUBLISHING LTD
Seiten: - Band / Heft: 22 (38) Artikelnummer: 385201 Start- / Endseite: - Identifikator: ISSN: 0957-4484