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  Microstructural control of the transport properties of β-FeSe films grown by sputtering

Ale Crivillero, M. V., Amigó, M. L., Haberkorn, N., Nieva, G., & Guimpel, J. (2019). Microstructural control of the transport properties of β-FeSe films grown by sputtering. Journal of Applied Physics, 126: 115303, pp. 1-8. doi:10.1063/1.5094131.

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Genre: Zeitschriftenartikel
Alternativer Titel : Journal of Applied Physics

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 Urheber:
Ale Crivillero, M. V.1, Autor           
Amigó, M. L.2, Autor
Haberkorn, N.2, Autor
Nieva, G.2, Autor
Guimpel, J.2, Autor
Affiliations:
1Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
2External Organizations, ou_persistent22              

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Schlagwörter: Electronic structure, Iron compounds, Selenium compounds, Strontium compounds, Textures, Thick films, Thin films, Titanium compounds, Transport properties, Epitaxial thin films, Growth parameters, Hall coefficient measurements, Lattice distortions, Low anisotropy, Microstructural control, Substrate temperature, Superconductor insulator transitions, Morphology
 Zusammenfassung: We have investigated the correlation between structural and transport properties in sputtered β-FeSe films grown onto SrTiO 3 (100). The growth parameters, such as substrate temperature and thickness, have been varied in order to explore different regimes. In the limit of textured thick films, we found promising features like an enhanced T c ∼ 12 K, a relatively high H c 2, and a low anisotropy. By performing magnetoresistance and Hall coefficient measurements, we investigate the influence of the disorder associated with the textured morphology on some features attributed to subtle details of the multiband electronic structure of β-FeSe. Regarding the superconductor-insulator transition induced by reducing the thickness, we found a nontrivial evolution of the structural properties and morphology associated with a strained initial growth and the coalescence of grains. Finally, we discuss the origin of the insulating behavior in high-quality stressed epitaxial thin films. We found that a lattice distortion, described by Poisson's coefficient associated with the lattice parameters a and c, may play a key role. © 2019 Author(s).

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Sprache(n): eng - English
 Datum: 2019-09-192019-09-19
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: DOI: 10.1063/1.5094131
 Art des Abschluß: -

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Titel: Journal of Applied Physics
  Kurztitel : J. Appl. Phys.
Genre der Quelle: Zeitschrift
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Affiliations:
Ort, Verlag, Ausgabe: New York, NY : AIP Publishing
Seiten: - Band / Heft: 126 Artikelnummer: 115303 Start- / Endseite: 1 - 8 Identifikator: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880