Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers

Weiss, Thomas Paul; Redinger, Alex; Rey, Germain; Schwarz, Torsten; Spies, Maria; Cojocaru-Mirédin, Oana; Choi, Pyuck-Pa; Siebentritt, Susanne

doi:10.1063/1.4959611

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Impact of annealing on electrical properties of Cu₂ZnSnSe₄ absorber layers

Weiss, T. P., Redinger, A., Rey, G., Schwarz, T., Spies, M., Cojocaru-Mirédin, O., et al. (2016). Impact of annealing on electrical properties of Cu₂ZnSnSe₄ absorber layers. Journal of Applied Physics, 120: 045703. doi:10.1063/1.4959611.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002B-B7CD-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002B-B7CE-7

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Creators:
Weiss, Thomas Paul^{1, 2}, Author
Redinger, Alex^{2, 3}, Author
Rey, Germain², Author
Schwarz, Torsten^{4, 5}, Author
Spies, Maria^{5, 6}, Author
Cojocaru-Mirédin, Oana^{4, 5}, Author
Choi, Pyuck-Pa^{5, 7}, Author
Siebentritt, Susanne², Author

Affiliations:
1Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland, ou_persistent22
2University of Luxembourg, Laboratory for Photovoltaics, 41, rue du Brill, L-4422, Belvaux, Luxembourg, ou_persistent22
3Helmholtz Zentrum Berlin, Department Complex Compound Semiconductor Materials for Photovoltaics, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany, ou_persistent22
4 I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany, ou_persistent22
5Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384
6Groupe de Physique des Matriaux, Université et INSA de Rouen, Normandie University, Rouen, France, ou_persistent22
7Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea, ou_persistent22

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Language(s): eng - English

Dates: Date issued: 2016

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.4959611

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Title: Journal of Applied Physics

Abbreviation : J. Appl. Phys.

Source Genre: Journal

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Publ. Info: New York, NY : AIP Publishing

Pages: 8 Volume / Issue: 120 Sequence Number: 045703 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880