Effect of charge on the movement of dislocations in SiC

Eberlein, T. A. G.; Jones, R.; Blumenau, A. T.; Öberg, S.; Briddon, P. R.

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Effect of charge on the movement of dislocations in SiC

Eberlein, T. A. G., Jones, R., Blumenau, A. T., Öberg, S., & Briddon, P. R. (2006). Effect of charge on the movement of dislocations in SiC. Applied Physics Letters, 88(8): 082113, pp. 082113-082113.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5BA0-F Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5BA2-B

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Eberlein, T. A. G., Author
Jones, R., Author
Blumenau, A. T.¹, Author
Öberg, S., Author
Briddon, P. R., Author

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1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351

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Dates: Date issued: 2006

Publication Status: Issued

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Identifiers: eDoc: 286129

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Title: Applied Physics Letters

Source Genre: Journal

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Pages: - Volume / Issue: 88 (8) Sequence Number: 082113 Start / End Page: 082113 - 082113 Identifier: -