Controlled enhancement of the electron field-effect mobility of F16CuPc 
thin-film transistors by use of functionalized SiO2 substrates

de Oteyza, D.; Barrena, E.; Osso, J.O.; Dosch, H.; Meyer, S.; Pflaum, J.

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Controlled enhancement of the electron field-effect mobility of F₁₆CuPc thin-film transistors by use of functionalized SiO₂ substrates

de Oteyza, D., Barrena, E., Osso, J., Dosch, H., Meyer, S., & Pflaum, J. (2006). Controlled enhancement of the electron field-effect mobility of F₁₆CuPc thin-film transistors by use of functionalized SiO₂ substrates. Applied Physics Letter, 87: 183504.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-4543-5 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-4544-3

Genre: Journal Article

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Creators:
de Oteyza, D.¹, Author
Barrena, E.¹, Author
Osso, J.O.², Author
Dosch, H.^{1, 3}, Author
Meyer, S.², Author
Pflaum, J.², Author

Affiliations:
1Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645
2Institut de Ciènca de Materials de Barcelona, CSIC, E-08190 Bellaterra, Spain; Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550 Stuttgart, Germany, III. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germany, ou_persistent22
3Universität Stuttgart, Institut für Theoretische und Angewandte Physik, ou_persistent22

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Free keywords: MPI für Metallforschung; Abt. Dosch;

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Language(s): eng - English

Dates: Date issued: 2006-10-26

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 265943

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Title: Applied Physics Letter

Source Genre: Journal

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Pages: - Volume / Issue: 87 Sequence Number: 183504 Start / End Page: - Identifier: -