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  Argon Physisorption as Structural Probe for Endohedrally Doped Silicon Clusters

Janssens, E., Grüne, P., Meijer, G., Wöste, L., Lievens, P., & Fielicke, A. (2007). Argon Physisorption as Structural Probe for Endohedrally Doped Silicon Clusters. Physical Review Letters, 99(6): 063401. doi:10.1103/PhysRevLett.99.063401.

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Janssens, E., Author
Grüne, Philipp1, Author           
Meijer, Gerard1, Author           
Wöste, Ludger, Author
Lievens, P., Author
Fielicke, André1, Author           
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1Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              

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 Abstract: We report on an element-dependent critical size for argon physisorption at 80 K on transition-metal-doped silicon clusters. Argon does not attach to elemental silicon clusters but only to surface-located transition-metal atoms. Thus physisorption provides structural information. Specifically, the minimal cluster size for the formation of endohedral singly metal-doped silicon cages has been determined. The observed critical size for doubly doped silicon clusters indicates that larger caged molecules can be formed, eventually leading to the growth of metal-doped silicon nanorods.

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Language(s): eng - English
 Dates: 2007-08-09
 Publication Status: Issued
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 Rev. Type: Peer
 Identifiers: eDoc: 319156
DOI: 10.1103/PhysRevLett.99.063401
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Title: Physical Review Letters
  Alternative Title : PRL
Source Genre: Journal
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Pages: - Volume / Issue: 99 (6) Sequence Number: 063401 Start / End Page: - Identifier: -