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  Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)

Pristovsek, M., Han, Y., Zhu, T., Oehler, F., Tang, F., Oliver, R. A., Humphreys, C. J., Tytko, D., Choi, P.-P., Raabe, D., Brunner, F., & Weyers, M. (2016). Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology, 31(8):. doi:10.1088/0268-1242/31/8/085007.

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アイテムのパーマリンク: https://hdl.handle.net/21.11116/0000-0001-B599-6 版のパーマリンク: https://hdl.handle.net/21.11116/0000-0001-B59B-4
資料種別: 学術論文

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 作成者:
Pristovsek, Markus1, 著者           
Han, Yisong1, 著者           
Zhu, Tongtong1, 著者           
Oehler, Fabrice1, 著者           
Tang, Fengzai1, 著者           
Oliver, Rachel A.2, 著者           
Humphreys, Colin J.3, 著者           
Tytko, Darius4, 著者           
Choi, Pyuck-Pa4, 著者           
Raabe, Dierk5, 著者           
Brunner, Frank6, 著者           
Weyers, Markus6, 著者           
所属:
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, UK, persistent22              
2Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK, ou_persistent22              
3Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, UK, ou_persistent22              
4Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
5Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              
6Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin, Germany, persistent22              

内容説明

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キーワード: High resolution transmission electron microscopy; Probes; Semiconductor quantum wells; Transmission electron microscopy, Atom probe tomography; Frequency distributions; InGaN; InGaN quantum wells; semi-polar; Step bunching; Structural and optical properties; Structural qualities, Optical properties
 要旨: We benchmarked growth, microstructure and photo luminescence (PL) of (112-2) InGaN quantum wells (QWs) against (0001) and (112-0). In incorporation, growth rate and the critical thickness of (112-2) QWs are slightly lower than (0001) QWs, while the In incorporation on (112-0) is reduced by a factor of three. A small step-bunching causes slight fluctuations of the emission wavelength. Transmission electron microscopy as well as atom probe tomography (APT) found very flat interfaces with little In segregation even for 20 In content. APT frequency distribution analysis revealed some deviation from a random InGaN alloy, but not as severe as for (112-0). The slight deviation of (112-2) QWs from an ideal random alloy did not broaden the 300 K PL, the line widths were similar for (112-2) and (0001) while (112-0) QWs were broader. Despite the high structural quality and narrow PL, the integrated PL signal at 300 K was about 4 lower on (112-2) and more than 10 lower on (112-0). © 2016 IOP Publishing Ltd.

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言語: eng - English
 日付: 2016-07-12
 出版の状態: 出版
 ページ: -
 出版情報: -
 目次: -
 査読: 査読あり
 識別子（DOI, ISBNなど）: DOI: 10.1088/0268-1242/31/8/085007
BibTex参照ID: Pristovsek2016
 学位: -

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出版物 1

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出版物名: Semiconductor Science and Technology
  その他 : Semicond. Sci. Technol.
種別: 学術雑誌
 著者・編者:
所属:
出版社, 出版地: London? : IOP Pub.
ページ: - 巻号: 31 (8) 通巻号: 085007 開始・終了ページ: - 識別子（ISBN, ISSN, DOIなど）: ISSN: 0268-1242
CoNE: https://pure.mpg.de/cone/journals/resource/954925500147