Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon 
Substrates for Solid State Lighting

Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.

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Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting

Albrecht, M., Markurt, T., Schulz, T., Lymperakis, L., Duff, A., Neugebauer, J., et al. (2012). Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. Talk presented at International Conference on Extended Defects in Semiconductors. Thessaloniki, Greek. 2012-06-24 - 2012-06-29.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-28D7-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-3FF8-5

Genre: Talk

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Creators:
Albrecht, M., Author
Markurt, T., Author
Schulz, T., Author
Lymperakis, L.¹, Author
Duff, A.¹, Author
Neugebauer, J.², Author
Drechsel, P., Author
Stauss, P., Author

Affiliations:
1External Organizations, ou_persistent22
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2012-06

Publication Status: Not specified

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Identifiers: eDoc: 626122

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Title: International Conference on Extended Defects in Semiconductors

Place of Event: Thessaloniki, Greek

Start-/End Date: 2012-06-24 - 2012-06-29

Invited: Yes

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