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  Highly p-doped epitaxial graphene obtained by fluorine intercalation

Walter, A. L., Jeon, K.-J., Bostwick, A., Speck, F., Ostler, M., Seyller, T., et al. (2011). Highly p-doped epitaxial graphene obtained by fluorine intercalation. Applied Physics Letters, 98(18): 184102. doi:10.1063/1.3586256.

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Walter, Andrew L.1, 2, Author           
Jeon, Ki-Joon3, Author
Bostwick, Aaron1, Author
Speck, Florian4, Author
Ostler, Markus4, Author
Seyller, Thomas4, Author
Moreschini, Luca1, Author
Kim, Yong Su1, 5, Author
Chang, Young Jun1, 2, Author
Horn, Karsten2, Author           
Rotenberg, Eli1, Author
Affiliations:
1Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA , ou_634547              
2Molecular Physics, Fritz Haber Institute, Max Planck Society, ou_634545              
3School of Electrical Engineering, University of Ulsan, Namgu, Ulsan 680-749, Republic of Korea , ou_persistent22              
4Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen, Germany , ou_persistent22              
5Department of Applied Physics, Hanyang University, Ansan, Gyeonggi-do 426-791, Republic of Korea , ou_persistent22              

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Free keywords: bonds (chemical), Fermi level, graphite intercalation compounds, hole density, semiconductor doping, semiconductor epitaxial layers, semiconductor growth
 Abstract: We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p ≈ 4.5×1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

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Language(s): eng - English
 Dates: 2011-02-112011-04-122011-05-032011
 Publication Status: Published in print
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.3586256
URI: http://link.aip.org/link/doi/10.1063/1.3586256
ISSN: 0003-6951 (print)
ISSN: 1077-3118 (online)
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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 98 (18) Sequence Number: 184102 Start / End Page: - Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223