Mechanical stress evolution in metal interconnects for various line aspect 
ratios and passivation dielectrics

Park, Y. B.; Jeon, I. S.

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Mechanical stress evolution in metal interconnects for various line aspect ratios and passivation dielectrics

Park, Y. B., & Jeon, I. S. (2003). Mechanical stress evolution in metal interconnects for various line aspect ratios and passivation dielectrics. Microelectronic Engineering, 69(1), 26-36.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2C6E-D Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2C6F-B

Genre: Journal Article

Alternative Title : Microelectron. Eng.

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Creators:
Park, Y. B.¹, Author
Jeon, I. S.², Author

Affiliations:
1Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497655
2Hynix Semiconductor, Ichon 467701, South Korea., ou_persistent22

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Free keywords: MPI für Metallforschung; Abt. Arzt; thermal stress, metal interconnect, aspect ratio, passivation dielectrics, keyholes

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Language(s): eng - English

Dates: Date issued: 2003-08

Publication Status: Issued

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Identifiers: eDoc: 112716
ISI: 000184675700004

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Title: Microelectronic Engineering

Alternative Title : Microelectron. Eng.

Source Genre: Journal

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Pages: - Volume / Issue: 69 (1) Sequence Number: - Start / End Page: 26 - 36 Identifier: ISSN: 0167-9317