Quantitative analysis of dislocation arrangements induced by electromigration 
in a passivated Al (0.5 wt % Cu) interconnect

Barabash, R. I.; Ice, G. E.; Tamura, N.; Valek, B. C.; Bravman, J. C.; Spolenak, R.; Patel, J. R.

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Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect

Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., et al. (2003). Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect. Journal of Applied Physics, 93(9), 5701-5706.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2CB5-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2CB6-9

Genre: Journal Article

Alternative Title : J. Appl. Phys.

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Creators:
Barabash, R. I.¹, Author
Ice, G. E.¹, Author
Tamura, N.¹, Author
Valek, B. C.¹, Author
Bravman, J. C.¹, Author
Spolenak, R.², Author
Patel, J. R.¹, Author

Affiliations:
1Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA.; Adv Light Source, Berkeley, CA 94720 USA.; Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA.; Stanford Synchrotron Radiat Labs, Stanford, CA 94309 USA., ou_persistent22
2Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497655

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Free keywords: MPI für Metallforschung; Abt. Arzt;

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Language(s): eng - English

Dates: Date issued: 2003-05-01

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 112654
ISI: 000182296700108

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Title: Journal of Applied Physics

Alternative Title : J. Appl. Phys.

Source Genre: Journal

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Pages: - Volume / Issue: 93 (9) Sequence Number: - Start / End Page: 5701 - 5706 Identifier: ISSN: 0021-8979