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  Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

Katcki, J., Ratajczak, J., Laszcz, A., Phillipp, F., Dubois, E., Larrieu, G., et al. (2003). Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures. In A. Cullis, & P. Midgley (Eds.), Microscopy of Semiconducting Materials 2003 (pp. 479-482). London: Institute of Physics.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2F22-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2F24-E
Genre: Conference Paper

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 Creators:
Katcki, J.1, Author
Ratajczak, J.1, Author
Laszcz, A.1, Author
Phillipp, F.2, Author           
Dubois, E.1, Author
Larrieu, G.1, Author
Penaud, J.1, Author
Baie, X.1, Author
Affiliations:
1Institute of Electron Technology, Warsaw, PolandIEMN/ISEN, UMR CNRS 8520, Villeneuve d'Ascq, France, ou_persistent22              
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497657              

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Free keywords: MPI für Intelligente Systeme; Ehem. Abt. Rühle;
 Abstract: -

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Language(s): eng - English
 Dates: 2003
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 169749
 Degree: -

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Title: Microscopy of Semiconducting Materials 2003
Place of Event: Cambridge, UK
Start-/End Date: 2003-03-21 - 2003-04-03

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Title: Microscopy of Semiconducting Materials 2003
Source Genre: Proceedings
 Creator(s):
Cullis, A., Editor
Midgley, P.A., Editor
Affiliations:
-
Publ. Info: London : Institute of Physics
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 479 - 482 Identifier: ISBN: 0 7503 0979 2

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Title: Institute of Physics Conference Series
Source Genre: Series
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Publ. Info: -
Pages: - Volume / Issue: 180 Sequence Number: - Start / End Page: - Identifier: -