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  Microstructural evolution of precursor-derived gallium nitride thin films

Puchinger, M., Kisailus, D. J., Lange, F. F., & Wagner, T. (2002). Microstructural evolution of precursor-derived gallium nitride thin films. Journal of Crystal Growth, 245(3-4), 219-227.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2FA3-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-2FA4-0
Genre: Journal Article
Alternative Title : J. Cryst. Growth

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44-ar_2002.pdf (Abstract), 55KB
 
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 Creators:
Puchinger, M.1, Author           
Kisailus, D. J.2, Author
Lange, F. F.2, Author
Wagner, T.3, Author           
Affiliations:
1Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497655              
2Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA, ou_persistent22              
3Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640              

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Free keywords: MPI für Metallforschung; MPI für Metallforschung; Abt. Arzt; Abt. Arzt; ZWE Dünnschichtlabor; 44-ar_2002; chemical solution deposition (CSD); precursor pyrolysis; vapor phase transport; gallium nitride; gallium oxide nitride
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Language(s): eng - English
 Dates: 2002-11
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 6665
ISI: 000179132100006
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Title: Journal of Crystal Growth
  Alternative Title : J. Cryst. Growth
Source Genre: Journal
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Pages: - Volume / Issue: 245 (3-4) Sequence Number: - Start / End Page: 219 - 227 Identifier: ISSN: 0022-0248