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  Chemical solution deposition derived buffer layers for MOCVD- grown GaN films

Puchinger, M., Wagner, T., Fini, P., Kisailus, D., Beck, U., Bill, J., et al. (2001). Chemical solution deposition derived buffer layers for MOCVD- grown GaN films. Journal of Crystal Growth, 233(1-2), 57-67.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-33E9-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-33EA-4
Genre: Journal Article
Alternative Title : J. Cryst. Growth

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28-ar_2001.pdf (Abstract), 62KB
 
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 Creators:
Puchinger, M.1, Author           
Wagner, T.2, Author           
Fini, P.3, Author
Kisailus, D.3, Author
Beck, U.3, Author
Bill, J.4, Author           
Aldinger, F.4, 5, Author           
Arzt, E.1, 6, Author           
Lange, F. F.3, Author
Affiliations:
1Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497655              
2Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640              
3Univ Stuttgart, Inst Nichtmet Anorgan Mat, Pulvermet Lab, D-70569 Stuttgart, Germany; Univ Stuttgart, Max Planck Inst Med Forsch, D-70569 Stuttgart, Germany; Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA, ou_persistent22              
4Universität Stuttgart, Institut für Nichtmetallische Anorganische Materialien, ou_persistent22              
5Former Dept. Materials Synthesis and Microstructure Design, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497654              
6Universität Stuttgart, Institut für Metallkunde, ou_persistent22              

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Free keywords: MPI für Metallforschung; Abt. Aldinger; Abt. Arzt; Abt. Arzt; ZWE Dünnschichtlabor; metalorganic chemical vapor deposition; gallium compounds
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Language(s): eng - English
 Dates: 2001-11
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 20439
ISI: 000170986400010
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Title: Journal of Crystal Growth
  Alternative Title : J. Cryst. Growth
Source Genre: Journal
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Pages: - Volume / Issue: 233 (1-2) Sequence Number: - Start / End Page: 57 - 67 Identifier: ISSN: 0022-0248