Characterization of GaN grown on sapphire by laser-induced molecular beam 
epitaxy

Zhou, H.; Rühm, A.; Jin-Phillipp, N. Y.; Phillipp, F.; Gross, M.; Schröder, H.

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Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Zhou, H., Rühm, A., Jin-Phillipp, N. Y., Phillipp, F., Gross, M., & Schröder, H. (2001). Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy. Journal of Materials Research, 16(1), 261-267.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-35B1-E Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-35B3-A

Genre: Journal Article

Alternative Title : J. Mater. Res.

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Creators:
Zhou, H.¹, Author
Rühm, A.², Author
Jin-Phillipp, N. Y.³, Author
Phillipp, F.³, Author
Gross, M.¹, Author
Schröder, H.², Author

Affiliations:
1Inst Tech Phys, D-70569 Stuttgart, Germany, ou_persistent22
2Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497645
3Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657

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Free keywords: MPI für Metallforschung; Ehemalige Abt. Rühle; ZWE Hochspannungs-Mikroskopie;

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Language(s): eng - English

Dates: Date issued: 2001-01

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 24403
ISI: 000166281200039

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Title: Journal of Materials Research

Alternative Title : J. Mater. Res.

Source Genre: Journal

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Pages: - Volume / Issue: 16 (1) Sequence Number: - Start / End Page: 261 - 267 Identifier: ISSN: 0884-2914