Interfacial microstructure and defect analysis in Cu(In,Ga)Se([sub]2)-based 
multilayered film by analytical transmission electron microscopy and focused 
ion beam

Zhang, Z.; Wagner, T.

doi:10.1016/j.tsf.2009.02.130

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Interfacial microstructure and defect analysis in Cu(In,Ga)Se([sub]2)-based multilayered film by analytical transmission electron microscopy and focused ion beam

Zhang, Z., & Wagner, T. (2009). Interfacial microstructure and defect analysis in Cu(In,Ga)Se([sub]2)-based multilayered film by analytical transmission electron microscopy and focused ion beam. Thin Solid Films, 517(15), 4329-4335. doi:10.1016/j.tsf.2009.02.130.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3D0D-4 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-3D0E-2

Genre: Journal Article

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Creators:
Zhang, Z.¹, Author
Wagner, T.², Author

Affiliations:
1Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657
2Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640

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Free keywords: MPI für Metallforschung; Abt. Arzt; ZWE Dünnschichtlabor;

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Language(s): eng - English

Dates: Date issued: 2009-03-05

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 435526
DOI: 10.1016/j.tsf.2009.02.130

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Title: Thin Solid Films

Source Genre: Journal

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Pages: - Volume / Issue: 517 (15) Sequence Number: - Start / End Page: 4329 - 4335 Identifier: -