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  Controlling the work function of ZnO and the energy-level alignment at the interface to organic semiconductors with a molecular electron acceptor

Schlesinger, R., Xu, Y., Hofmann, O. T., Winkler, S., Frisch, J., Niederhausen, J., et al. (2013). Controlling the work function of ZnO and the energy-level alignment at the interface to organic semiconductors with a molecular electron acceptor. Physical Review B, 87(15): 155311. doi:10.1103/PhysRevB.87.155311.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-000E-FA55-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-6EAE-4
Genre: Journal Article

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PhysRevB.87.155311.pdf (Publisher version), 2MB
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2013
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 Creators:
Schlesinger, Raphael1, Author
Xu, Yong2, Author           
Hofmann, Oliver T.2, Author           
Winkler, Stefanie3, Author
Frisch, Johannes1, Author
Niederhausen, Jens1, Author
Vollmer, Antje3, Author
Blumstengel, Sylke1, Author
Henneberger, Fritz1, Author
Rinke, Patrick2, Author           
Scheffler, Matthias2, Author           
Koch, Norbert1, 3, Author
Affiliations:
1Institut für Physik, Humboldt-Universität zu Berlin,, 12489 Berlin, Germany, ou_persistent22              
2Theory, Fritz Haber Institute, Max Planck Society, ou_634547              
3Helmholtz-Zentrum Berlin für Materialien und Energie GmbH- BESSY II, 12489 Berlin, Germany, ou_persistent22              

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 Abstract: We show that the work function (Φ) of ZnO can be increased by up to 2.8 eV by depositing the molecular electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). On metals, already much smaller Φ increases involve significant charge transfer to F4TCNQ. No indication of negatively charged F4TCNQ on ZnO is found by photoemission spectroscopy. This fundamental difference is explained by a simple electrostatic model that identifies the bulk doping and band bending in ZnO as key parameters. Varying Φ of the inorganic semiconductor enables tuning the energy-level alignment at ZnO/organic semiconductor interfaces.

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Language(s): eng - English
 Dates: 2012-11-042013-04-222013-04-22
 Publication Status: Issued
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.87.155311
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Title: Physical Review B
Source Genre: Journal
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Publ. Info: Woodbury, NY : Published by the American Physical Society through the American Institute of Physics
Pages: - Volume / Issue: 87 (15) Sequence Number: 155311 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008