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  Thermodynamic equilibrium conditions of graphene films on SiC

Nemec, L., Blum, V., Rinke, P., & Scheffler, M. (2013). Thermodynamic equilibrium conditions of graphene films on SiC. Physical Review Letters, 111(6): 065502. doi:10.1103/PhysRevLett.111.065502.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-45FB-F Version Permalink: https://hdl.handle.net/21.11116/0000-0005-97CA-D
Genre: Journal Article

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PhysRevLett.111.065502.pdf (Publisher version), 571KB
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 Creators:
Nemec, Lydia1, Author           
Blum, Volker1, Author           
Rinke, Patrick1, Author           
Scheffler, Matthias1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Abstract: First-principles surface phase diagrams reveal that epitaxial monolayer graphene films on the Si
side of 3C-SiC(111) can exist as thermodynamically stable phases in a narrow range of experimentally
controllable conditions, defining a path to the highest-quality graphene films. Our calculations
are based on a van der Waals corrected density functional. The full, experimentally observed
(6 sqrt(3)x 6 sqrt(3))-R30 supercells for zero- to trilayer graphene are essential to describe the correct
interface geometries and the relative stability of surface phases and possible defects.

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Language(s): eng - English
 Dates: 2013-04-292013-08-062013-08-09
 Publication Status: Issued
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevLett.111.065502
 Degree: -

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Title: Physical Review Letters
Source Genre: Journal
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Publ. Info: Woodbury, N.Y., etc. : American Physical Society.
Pages: - Volume / Issue: 111 (6) Sequence Number: 065502 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1