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  Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique

Sizov, A. S., Agina, E. V., Gholamrezaie, F., Bruevich, V. V., Borshchev, O. V., Paraschuk, D. Y., et al. (2013). Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique. Applied Physics Letters, 103(4): 043310. doi:10.1063/1.4816839.

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 Creators:
Sizov, A. S., Author
Agina, E. V., Author
Gholamrezaie, Fatemeh1, Author           
Bruevich, V. V., Author
Borshchev, O. V., Author
Paraschuk, D. Y., Author
de Leeuw, Dago M.1, Author           
Ponomarenko, S. A., Author
Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284              

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Language(s): eng - English
 Dates: 2013
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1063/1.4816839
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 103 (4) Sequence Number: 043310 Start / End Page: - Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223