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キーワード:
Ultrathin oxide films; silica; silicatene; topological defects; graphene
要旨:
Topological defects in two-dimensional materials such as graphene are considered as a tool for tailoring their physical properties. Here, we studied defect structures on a single-layer silica (silicatene) supported on Ru(0001) using a low energy electron diffraction, scanning tunneling microscopy, infrared reflection–absorption spectroscopy, and photoelectron spectroscopy. The results revealed easy formation of periodic defect structures, which were previously predicted for graphene on a theoretical ground, yet experimentally unrealized. The structural similarities between single-layer materials (graphene, silicene, silicatene) open a new playground for deeper understanding and tailoring structural, electronic, and chemical properties of the truly two-dimensional systems.
