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  Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films

Köhler, A., Knez, I., Ebke, D., Felser, C., & Parkin, S. S. P. (2013). Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films. Applied Physics Letters, 103(16): 162406, pp. 1-4. doi:10.1063/1.4825278.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-1A90-5 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-52B4-2
Genre: Journal Article

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 Creators:
Köhler, A.1, Author              
Knez, I., Author
Ebke, D.2, Author              
Felser, C.3, Author              
Parkin, S. S. P., Author
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863430              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: We have investigated the magnetization and loss of anisotropy in ultrathin strained and unstrained Mn-Ga films at room temperature. Two Mn-Ga compositions, one of which is doped with Co, were grown on Cr buffered MgO (001) substrates. Films with a thickness below 10 nm are highly strained and the ratio c/a vs. thickness is depending on composition. The perpendicular magnetic anisotropy is shown to be drastically reduced with decreasing thickness and increasing strain. These findings should be considered when generalizing and downscaling results obtained from films > 20 nm. The strain can effectively be reduced by introducing an additional Pt buffer and thus maintaining a high perpendicular magnetic anisotropy for a thickness as low as 6 nm. (C) 2013 AIP Publishing LLC.

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Language(s): eng - English
 Dates: 2013-10-14
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 671339
ISI: 000326148700050
DOI: 10.1063/1.4825278
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 103 (16) Sequence Number: 162406 Start / End Page: 1 - 4 Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223