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  Large-Gap Quantum Spin Hall Insulators in Tin Films

Xu, Y., Yan, B., Zhang, H. J., Wang, J., Xu, G., Tang, P. Z., et al. (2013). Large-Gap Quantum Spin Hall Insulators in Tin Films. Physical Review Letters, 111(13): 136804, pp. 136804-1-136804-5. doi:10.1103/PhysRevLett.111.136804.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-1E4E-1 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-1E4F-0
Genre: Journal Article

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 Creators:
Xu, Y., Author
Yan, B.1, Author              
Zhang, H. J., Author
Wang, J., Author
Xu, G., Author
Tang, P. Z., Author
Duan, W. H., Author
Zhang, S. C., Author
Affiliations:
1Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

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 Abstract: The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Gamma point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

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Language(s): eng - English
 Dates: 2013-09-24
 Publication Status: Published in print
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Title: Physical Review Letters
Source Genre: Journal
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Pages: - Volume / Issue: 111 (13) Sequence Number: 136804 Start / End Page: 136804-1 - 136804-5 Identifier: ISSN: 0031-9007