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  Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl

Ouardi, S., Fecher, G. H., Felser, C., & Kübler, J. (2013). Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl. Physical Review Letters, 110(10): 100401, pp. 100401-1-100401-5. doi:10.1103/PhysRevLett.110.100401.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-1F28-D Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-1F29-B
Genre: Journal Article

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 Creators:
Ouardi, S.1, Author              
Fecher, G. H.2, Author              
Felser, C.3, Author              
Kübler, J., Author
Affiliations:
1Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439              
2Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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Language(s): eng - English
 Dates: 2013-03-05
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 636522
DOI: 10.1103/PhysRevLett.110.100401
 Degree: -

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Title: Physical Review Letters
Source Genre: Journal
 Creator(s):
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Publ. Info: -
Pages: - Volume / Issue: 110 (10) Sequence Number: 100401 Start / End Page: 100401-1 - 100401-5 Identifier: ISSN: 0031-9007