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  Prediction of Weak Topological Insulators in Layered Semiconductors

Yan, B., Müchler, L., & Felser, C. (2012). Prediction of Weak Topological Insulators in Layered Semiconductors. Physical Review Letters, 109(11): 116406, pp. 116406-1-116406-5. doi:10.1103/PhysRevLett.109.116406.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-203C-B Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-203D-9
Genre: Journal Article

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 Creators:
Yan, B.1, Author              
Müchler, L.2, Author              
Felser, C.3, Author              
Affiliations:
1Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              
2Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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Language(s): eng - English
 Dates: 2012-09-13
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 619246
DOI: 10.1103/PhysRevLett.109.116406
 Degree: -

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Title: Physical Review Letters
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 109 (11) Sequence Number: 116406 Start / End Page: 116406-1 - 116406-5 Identifier: ISSN: 0031-9007