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  Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

Kozina, X., Jaeger, T., Ouardi, S., Gloskowskij, A., Stryganyuk, G., Jakob, G., et al. (2011). Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy. Applied Physics Letters, 99(22): 221908, pp. 221908-1-221908-3. doi:10.1063/1.3665621.

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 Creators:
Kozina, X., Author
Jaeger, T., Author
Ouardi, S.1, Author           
Gloskowskij, A., Author
Stryganyuk, G., Author
Jakob, G., Author
Sugiyama, T., Author
Ikenaga, E., Author
Fecher, G. H.2, Author           
Felser, C.3, Author           
Affiliations:
1Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439              
2Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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Language(s): eng - English
 Dates: 2011-11-30
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 576545
DOI: 10.1063/1.3665621
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 99 (22) Sequence Number: 221908 Start / End Page: 221908-1 - 221908-3 Identifier: ISSN: 0003-6951