Electronic doping of graphene by deposited transition metal atoms

Santos, J. E.; Peres, N. M. R.; Lopes dos Santos, J. M. B.; Castro Neto, A. H.

doi:10.1103/PhysRevB.84.085430

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Electronic doping of graphene by deposited transition metal atoms

Santos, J. E., Peres, N. M. R., Lopes dos Santos, J. M. B., & Castro Neto, A. H. (2011). Electronic doping of graphene by deposited transition metal atoms. Physical Review B, 84(8): 085430, pp. 085430-1-085430-15. doi:10.1103/PhysRevB.84.085430.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-2206-4 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-2207-2

Genre: Journal Article

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Santos, J. E.¹, Author
Peres, N. M. R., Author
Lopes dos Santos, J. M. B., Author
Castro Neto, A. H., Author

Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404

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Language(s): eng - English

Dates: Date issued: 2011-08-26

Publication Status: Issued

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Identifiers: eDoc: 572364
DOI: 10.1103/PhysRevB.84.085430

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Title: Physical Review B

Source Genre: Journal

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Pages: - Volume / Issue: 84 (8) Sequence Number: 085430 Start / End Page: 085430-1 - 085430-15 Identifier: ISSN: 1098-0121