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  Crystal Structure Refinement and Electronic Properties of Si(cI16)

Wosylus, A., Rosner, H., Schnelle, W., & Schwarz, U. (2009). Crystal Structure Refinement and Electronic Properties of Si(cI16). Zeitschrift für Anorganische und Allgemeine Chemie, 635(4-5), 700-703. doi:10.1002/zaac.200900051.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-25E8-A Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-0BA9-0
Genre: Journal Article

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 Creators:
Wosylus, A.1, Author              
Rosner, H.2, Author              
Schnelle, W.3, Author              
Schwarz, U.4, Author              
Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404              
2Helge Rosner, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863450              
3Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
4Ulrich Schwarz, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863423              

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Language(s): eng - English
 Dates: 2009
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 431922
DOI: 10.1002/zaac.200900051
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Title: Zeitschrift für Anorganische und Allgemeine Chemie
Source Genre: Journal
 Creator(s):
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Publ. Info: -
Pages: - Volume / Issue: 635 (4-5) Sequence Number: - Start / End Page: 700 - 703 Identifier: -