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  Electronic structure of mixed-valence semiconductors in the LSDA+U approximation. I. Sm monochalcogenides

Antonov, V. N., Harmon, B. N., & Yaresko, A. N. (2002). Electronic structure of mixed-valence semiconductors in the LSDA+U approximation. I. Sm monochalcogenides. Physical Review B, 66(16): 165208, pp. 165208-165208. doi:10.1103/PhysRevB.66.165208.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-30EF-9 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0017-C95E-3
Genre: Journal Article

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Antonov, V. N.1, Author              
Harmon, B. N., Author
Yaresko, A. N.1, Author              
Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404              

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 Abstract: The electronic structure and optical spectra of Sm monochalcogenides are investigated theoretically from first principles, using the fully relativistic Dirac LMTO band structure method. The electronic structure is obtained with the local spin-density approximation (LSDA), as well as with the so-called LSDA+U approach. In contrast to LSDA, where the stable solution in SmS is a metal, the LSDA+U gave an insulating ground state. The energy band structure of samarium monochalcogenides describes well their measured x-ray photoemission spectra (XPS) as well as their optical spectra. The electronic structure of SmS high-pressure golden phase calculated in the LSDA+U approximation is characterized by five fully occupied 4f levels situated around 6 eV below the Fermi level and a sixth 4f level partly occupied due to pinning at the Fermi level. The occupation number is equal to 0.45 (valence 2.55+).

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Language(s): eng - English
 Dates: 2002-10-15
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: Peer
 Identifiers: eDoc: 16300
ISI: 000179286400063
DOI: 10.1103/PhysRevB.66.165208
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Title: Physical Review B
  Alternative Title : Phys. Rev. B
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 66 (16) Sequence Number: 165208 Start / End Page: 165208 - 165208 Identifier: ISSN: 0163-1829