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  Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms

Malachias, A., Stoffel, M., Schmidbauer, M., Schulli, T. U., Medeiros-Ribeiro, G., Schmidt, O. G., et al. (2010). Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms. Physical Review B, 82(3): 035307. doi:10.1103/PhysRevB.82.035307.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0015-4B43-A Version Permalink: http://hdl.handle.net/21.11116/0000-0002-C862-E
Genre: Journal Article

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488956.pdf (Publisher version), 912KB
 
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 Creators:
Malachias, A., Author
Stoffel, M., Author
Schmidbauer, M., Author
Schulli, T. U., Author
Medeiros-Ribeiro, G., Author
Schmidt, O. G., Author
Magalhaes-Paniago, R., Author
Metzger, T. H.1, Author              
Affiliations:
1Biomaterialien, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_1863285              

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Language(s): eng - English
 Dates: 2010-07-15
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: eDoc: 488956
ISI: 000279937500005
DOI: 10.1103/PhysRevB.82.035307
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 82 (3) Sequence Number: 035307 Start / End Page: - Identifier: ISSN: 1098-0121