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  Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature

Kou, L., Yan, B., Hu, F., Wu, S.-C., Wehling, T. O., Felser, C., et al. (2013). Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature. Nano Letters, 13(12), 6251-6255. doi:10.1021/nl4037214.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0017-BFCC-B Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-625F-3
Genre: Journal Article

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 Creators:
Kou, Liangzhi1, Author
Yan, Binghai2, Author              
Hu, Feiming1, Author
Wu, Shu-Chun3, Author              
Wehling, Tim O.1, Author
Felser, Claudia4, Author              
Chen, Changfeng1, Author
Frauenheim, Thomas1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              
3Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
4Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as the quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30-50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates the feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

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 Dates: 2013-11-08
 Publication Status: Published in print
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 Rev. Method: -
 Identifiers: ISI: 000328439200076
DOI: 10.1021/nl4037214
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Title: Nano Letters
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 13 (12) Sequence Number: - Start / End Page: 6251 - 6255 Identifier: ISSN: 1530-6984
CoNE: https://pure.mpg.de/cone/journals/resource/110978984570403