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  Detection of the valence band in buried Co2MnSi-MgO tunnel junctions by means of photoemission spectroscopy

Fecher, G. H., Balke, B., Gloskowskii, A., Ouardi, S., Felser, C., Ishikawa, T., et al. (2008). Detection of the valence band in buried Co2MnSi-MgO tunnel junctions by means of photoemission spectroscopy. Applied Physics Letters, 92(19): 193513, pp. 1-3. doi:10.1063/1.2931089.

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Fecher, Gerhard H., Author
Balke, Benjamin1, Author
Gloskowskii, Andrei1, Author
Ouardi, Siham, Author
Felser, Claudia2, Author           
Ishikawa, Takayuki1, Author
Yamamoto, Masafumi1, Author
Yamashita, Yoshiyuki1, Author
Yoshikawa, Hideki1, Author
Ueda, Shigenori1, Author
Kobayashi, Keisuke1, Author
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1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 Abstract: This work reports on the detection of the valence band of buried Heusler compounds by means of hard x-ray photoemission spectroscopy. The measurements have been performed on the so-called "half" tunnel junctions that are thin films of Co2MnSi underneath MgO. Starting from the substrate, the structure of the samples is MgO(buffer)-Co2MnSi-MgO(t(MgO))-AlOx with a thickness tMgO of the upper MgO layer of 2 and 20 nm. The valence band x-ray photoemission spectra have been excited by hard x rays of about 6 keV energy. The valence band spectra have been used to estimate the mean free path of the electrons through the MgO layer to be 17 nm at kinetic energies of about 6 keV. In particular, it is shown that the buried Co2MnSi films exhibit the same valence density of states as in bulk samples. (c) 2008 American Institute of Physics.

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 Dates: 2008-05-12
 Publication Status: Issued
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 Identifiers: ISI: 000256564200110
DOI: 10.1063/1.2931089
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Title: Applied Physics Letters
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 92 (19) Sequence Number: 193513 Start / End Page: 1 - 3 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223