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要旨:
Due to their exceptional thermoelectric properties Half-Heusler alloys
like MNiSn (M = Ti, Zr, Hf) have moved into focus. The growth of single
crystalline thin film TiNiSn and Zr0.5Hf0.5NiSn by dc magnetron
sputtering is reported. Seebeck and resistivity measurements were
performed and their dependence on epitaxial quality is shown. Seebeck
coefficient, specific resistivity and power factor for Zr0.5Hf0.5NiSn at
room temperature were measured to be 63 mu V K-1, 14.1 mu Omega m and
0.28 mW K-2 m(-1), respectively. Multilayers of TiNiSn and
Zr0.5Hf0.5NiSn are promising candidates to increase the thermoelectric
figure-of-merit by decreasing thermal conductivity perpendicular to the
interfaces. The epitaxial growth of multilayers containing TiNiSn and
Zr0.5Hf0.5NiSn is demonstrated by measuring satellite peaks in the X-ray
diffraction pattern originating from the additional symmetry
perpendicular to the film surface. (C) 2011 Elsevier B.V. All rights
reserved.
