Exploring Co2MnAl Heusler compound for anomalous Hall effect sensors

Vilanova Vidal, E.; Stryganyuk, G.; Schneider, H.; Felser, C.; Jakob, G.

doi:10.1063/1.3644157

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Exploring Co₂MnAl Heusler compound for anomalous Hall effect sensors

Vilanova Vidal, E., Stryganyuk, G., Schneider, H., Felser, C., & Jakob, G. (2011). Exploring Co₂MnAl Heusler compound for anomalous Hall effect sensors. Applied Physics Letters, 99(13): 132509, pp. 1-3. doi:10.1063/1.3644157.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0018-B5CF-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0018-B5D2-9

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Vilanova Vidal, E.¹, Author
Stryganyuk, G.¹, Author
Schneider, H.¹, Author
Felser, C.², Author
Jakob, G.¹, Author

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1external, ou_persistent22
2External Organizations, ou_persistent22

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Abstract: Sets of Heusler compound Co2MnAl thin films were grown on MgO (100) and Si (100) substrates by radio frequency magnetron sputtering. Composition, magnetic, and transport properties were studied systematically for samples deposited at different conditions. In particular, the anomalous Hall effect resistivity presents an extraordinarily temperature independent behavior in a moderate magnetic field range from 0 to 0.6 T. We analyzed the off-diagonal transport at temperatures up to 300 °C. Our data show the suitability of the material for Hall sensors working well above room temperature.

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Dates: Date issued: 2011-09-26

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.3644157

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Title: Applied Physics Letters

Source Genre: Journal

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Publ. Info: Melville, NY : American Institute of Physics

Pages: - Volume / Issue: 99 (13) Sequence Number: 132509 Start / End Page: 1 - 3 Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223