Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films 
by hard x-ray photoelectron spectroscopy

Kozina, Xeniya; Karel, Julie; Ouardi, Siham; Chadov, Stanislav; Fecher, Gerhard H.; Felser, Claudia; Stryganyuk, Gregory; Balke, Benjamin; Ishikawa, Takayuki; Uemura, Tetsuya; Yamamoto, Masafumi; Ikenaga, Eiji; Ueda, Shigenori; Kobayashi, Keisuke

doi:10.1103/PhysRevB.89.125116

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Probing the electronic states of high-TMR off-stoichiometric Co₂MnSi thin films by hard x-ray photoelectron spectroscopy

Kozina, X., Karel, J., Ouardi, S., Chadov, S., Fecher, G. H., Felser, C., et al. (2014). Probing the electronic states of high-TMR off-stoichiometric Co₂MnSi thin films by hard x-ray photoelectron spectroscopy. Physical Review B, 89(12): 125116, pp. 1-10. doi:10.1103/PhysRevB.89.125116.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0018-BBE8-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0018-BBF3-2

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Kozina, Xeniya¹, Author
Karel, Julie², Author
Ouardi, Siham³, Author
Chadov, Stanislav⁴, Author
Fecher, Gerhard H.⁵, Author
Felser, Claudia⁶, Author
Stryganyuk, Gregory¹, Author
Balke, Benjamin¹, Author
Ishikawa, Takayuki¹, Author
Uemura, Tetsuya¹, Author
Yamamoto, Masafumi¹, Author
Ikenaga, Eiji¹, Author
Ueda, Shigenori¹, Author
Kobayashi, Keisuke¹, Author

Affiliations:
1external, ou_persistent22
2Julie Karel, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863434
3Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439
4Stanislav Chadov, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863440
5Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431
6Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429

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Abstract: The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic tunnel junctions with an off-stoichiometric Co2MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co2Mn1.29Si. In this paper, we explain the behavior of the observed TMR ratio using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For the Mn-deficient samples, we show that the the drop of the TMR is caused by Co antisite atoms, which impose extra states into the minority-spin band gap. On the other hand, Mn-excess composition shows nearly half-metallic behavior. This result can be intuitively understood since both Co2MnSi and Mn2CoSi are theoretically predicted to be half-metallic ferromagnets.

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Dates: Date issued: 2014-03-17

Publication Status: Issued

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Identifiers: DOI: 10.1103/PhysRevB.89.125116

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Title: Physical Review B

Other : Phys. Rev. B

Source Genre: Journal

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Publ. Info: Woodbury, NY : American Physical Society

Pages: - Volume / Issue: 89 (12) Sequence Number: 125116 Start / End Page: 1 - 10 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008