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  Precise measurements of oxygen content: Oxygen vacancies in transparent conducting indium oxide films

Bellingham, J., Mackenzie, A. P., & Phillips, W. (1991). Precise measurements of oxygen content: Oxygen vacancies in transparent conducting indium oxide films. Applied Physics Letters, 58(22), 2506-2508. doi:10.1063/1.104858.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0018-E808-5 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0018-E80A-1
Genre: Journal Article

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Bellingham, J.R.1, Author
Mackenzie, A. P.2, Author              
Phillips, W.A.1, Author
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1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 Abstract: High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxygen deficiency with carrier concentration in thin films of amorphous indium oxide. This has shown that there are ten times as many oxygen vacancies as would be expected from the carrier concentration measurements, giving a doping efficiency of 0.1. It is therefore clear that the doping mechanism is more complex than the usual picture of every oxygen vacancy producing two free electrons.

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 Dates: 1991-06-03
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: A1991FP31100017
DOI: 10.1063/1.104858
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Title: Applied Physics Letters
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 58 (22) Sequence Number: - Start / End Page: 2506 - 2508 Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223