Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: 
An Ab Initio Approach

Duff, A.; Lymperakis, L.; Neugebauer, J.

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Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach

Duff, A., Lymperakis, L., & Neugebauer, J. (2013). Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach. Poster presented at 10th International Conference on Nitride Semiconductors, Washigton DC, USA.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-21FE-2 Version Permalink: https://hdl.handle.net/21.11116/0000-0002-8DA3-7

Genre: Poster

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Creators:
Duff, A.¹, Author
Lymperakis, L.¹, Author
Neugebauer, J.², Author

Affiliations:
1External Organizations, ou_persistent22
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2013-08

Publication Status: Not specified

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Identifiers: eDoc: 671096

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Title: 10th International Conference on Nitride Semiconductors

Place of Event: Washigton DC, USA

Start-/End Date: 2013-08-25 - 2013-08-30

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