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  Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach

Duff, A., Lymperakis, L., & Neugebauer, J. (2013). Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach. Poster presented at 10th International Conference on Nitride Semiconductors, Washigton DC, USA.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-21FE-2 Version Permalink: http://hdl.handle.net/21.11116/0000-0002-8DA3-7
Genre: Poster

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 Creators:
Duff, A.1, Author              
Lymperakis, L.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1External Organizations, ou_persistent22              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2013-08
 Publication Status: Not specified
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 671096
 Degree: -

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Title: 10th International Conference on Nitride Semiconductors
Place of Event: Washigton DC, USA
Start-/End Date: 2013-08-25 - 2013-08-30

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