Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio 
Tailored STM Approach

Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.

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Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach

Lymperakis, L., Weidlich, P. H., Eisele, H., Schnedler, M., Nys, J.-P., Grandidier, B., et al. (2013). Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. Talk presented at 10th International Conference on Nitride Semiconductors. Washigton DC, USA. 2013-08-25 - 2013-08-30.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2202-E Version Permalink: https://hdl.handle.net/21.11116/0000-0002-D289-6

Genre: Talk

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Creators:
Lymperakis, L.¹, Author
Weidlich, P. H., Author
Eisele, H., Author
Schnedler, M., Author
Nys, J.-P., Author
Grandidier, B., Author
Stievenard, D., Author
Dunin-Borkowski, R., Author
Neugebauer, J.², Author
Ebert, P., Author

Affiliations:
1External Organizations, ou_persistent22
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2013-08

Publication Status: Not specified

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Identifiers: eDoc: 671097

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Title: 10th International Conference on Nitride Semiconductors

Place of Event: Washigton DC, USA

Start-/End Date: 2013-08-25 - 2013-08-30

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