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  Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN

Markurt, T., Lymperakis, L., Neugebauer, J., Drechsel, P., Stauß, P., Schulz, T., et al. (2013). Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters, 110(3): 036103. doi:10.1103/PhysRevLett.110.036103.

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 Creators:
Markurt, Toni1, Author           
Lymperakis, Liverios2, Author           
Neugebauer, Jörg3, Author           
Drechsel, Philipp4, Author           
Stauß, Peter4, Author           
Schulz, Tobias5, Author           
Remmele, Thilo1, Author           
Grillo, Vincenzo6, 7, Author           
Rotunno, Enzo6, Author           
Albrecht, Martin R.8, Author           
Affiliations:
1Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany, ou_persistent22              
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
4OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany, ou_persistent22              
5Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany, ou_persistent22              
6National Research Centre IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy, ou_persistent22              
7National Research Centre S3 CNR-INFM, Via Campi 213/A, 41125 Modena, Italy, ou_persistent22              
8Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin, Germany, ou_persistent22              

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Language(s): eng - English
 Dates: 2013-01-18
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 670850
DOI: 10.1103/PhysRevLett.110.036103
 Degree: -

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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: 5 Volume / Issue: 110 (3) Sequence Number: 036103 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1