English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN

Markurt, T., Lymperakis, L., Neugebauer, J., Drechsel, P., Stauß, P., Schulz, T., et al. (2013). Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters, 110(3): 036103. doi:10.1103/PhysRevLett.110.036103.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-2536-4 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0025-76A8-1
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Markurt, Toni1, Author              
Lymperakis, Liverios2, Author              
Neugebauer, Jörg3, Author              
Drechsel, Philipp4, Author              
Stauß, Peter4, Author              
Schulz, Tobias5, Author              
Remmele, Thilo1, Author              
Grillo, Vincenzo6, 7, Author              
Rotunno, Enzo6, Author              
Albrecht, Martin R.8, Author              
Affiliations:
1Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany, ou_persistent22              
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
4OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany, ou_persistent22              
5Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany, ou_persistent22              
6National Research Centre IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy, ou_persistent22              
7National Research Centre S3 CNR-INFM, Via Campi 213/A, 41125 Modena, Italy, ou_persistent22              
8Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin, Germany, ou_persistent22              

Content

show

Details

show
hide
Language(s): eng - English
 Dates: 2013-01-18
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 670850
DOI: 10.1103/PhysRevLett.110.036103
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: 5 Volume / Issue: 110 (3) Sequence Number: 036103 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: /journals/resource/954925433406_1