Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as 
an Antisurfactant in the Growth of GaN

Markurt, Toni; Lymperakis, Liverios; Neugebauer, Jörg; Drechsel, Philipp; Stauß, Peter; Schulz, Tobias; Remmele, Thilo; Grillo, Vincenzo; Rotunno, Enzo; Albrecht, Martin R.

doi:10.1103/PhysRevLett.110.036103

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Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN

Markurt, T., Lymperakis, L., Neugebauer, J., Drechsel, P., Stauß, P., Schulz, T., et al. (2013). Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters, 110(3): 036103. doi:10.1103/PhysRevLett.110.036103.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2536-4 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0025-76A8-1

Genre: Journal Article

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Creators:
Markurt, Toni¹, Author
Lymperakis, Liverios², Author
Neugebauer, Jörg³, Author
Drechsel, Philipp⁴, Author
Stauß, Peter⁴, Author
Schulz, Tobias⁵, Author
Remmele, Thilo¹, Author
Grillo, Vincenzo^{6, 7}, Author
Rotunno, Enzo⁶, Author
Albrecht, Martin R.⁸, Author

Affiliations:
1Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany, ou_persistent22
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337
4OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany, ou_persistent22
5Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany, ou_persistent22
6National Research Centre IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy, ou_persistent22
7National Research Centre S3 CNR-INFM, Via Campi 213/A, 41125 Modena, Italy, ou_persistent22
8Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin, Germany, ou_persistent22

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Language(s): eng - English

Dates: Published in Print: 2013-01-18

Publication Status: Published in print

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Identifiers: eDoc: 670850
DOI: 10.1103/PhysRevLett.110.036103

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Title: Physical Review Letters

Abbreviation : Phys. Rev. Lett.

Source Genre: Journal

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Publ. Info: Woodbury, N.Y. : American Physical Society

Pages: 5 Volume / Issue: 110 (3) Sequence Number: 036103 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1