English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Mehrtens, T., Schowalter, M., Tytko, D., Choi, P.-P., Raabe, D., Hoffmann, L., et al. (2013). Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13): 132112. doi:10.1063/1.4799382.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-25CE-E Version Permalink: http://hdl.handle.net/21.11116/0000-0001-E3DE-5
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Mehrtens, Thorsten1, Author              
Schowalter, Marco1, Author              
Tytko, Darius2, Author              
Choi, Pyuck-Pa2, Author              
Raabe, Dierk3, Author              
Hoffmann, Lars4, Author              
Jönen, Holger4, Author              
Rossow, Uwe4, Author              
Hangleiter, Andreas4, Author              
Rosenauer, Andreas1, Author              
Affiliations:
1Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, Bremen, Germany, ou_persistent22              
2Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
3Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              
4Institute of Applied Physics, TU Braunschweig, 38106 Braunschweig, Germany, persistent22              

Content

show

Details

show
hide
Language(s): eng - English
 Dates: 2013-04-04
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: eDoc: 668578
DOI: 10.1063/1.4799382
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Melville, NY : American Institute of Physics
Pages: 4 Volume / Issue: 102 (13) Sequence Number: 132112 Start / End Page: - Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223