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  Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Mehrtens, T., Schowalter, M., Tytko, D., Choi, P.-P., Raabe, D., Hoffmann, L., et al. (2013). Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13): 132112. doi:10.1063/1.4799382.

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 Creators:
Mehrtens, Thorsten1, Author              
Schowalter, Marco1, Author              
Tytko, Darius2, Author              
Choi, Pyuck-Pa2, Author              
Raabe, Dierk3, Author              
Hoffmann, Lars4, Author              
Jönen, Holger4, Author              
Rossow, Uwe4, Author              
Hangleiter, Andreas4, Author              
Rosenauer, Andreas1, Author              
Affiliations:
1Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, Bremen, Germany, ou_persistent22              
2Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
3Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              
4Institute of Applied Physics, TU Braunschweig, 38106 Braunschweig, Germany, persistent22              

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Language(s): eng - English
 Dates: 2013-04-04
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 668578
DOI: 10.1063/1.4799382
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Melville, NY : American Institute of Physics
Pages: 4 Volume / Issue: 102 (13) Sequence Number: 132112 Start / End Page: - Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223