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  Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters

Pfanner, G., Freysoldt, C., Neugebauer, J., Inam, F., Drabold, D. A., Jarolimek, K., et al. (2013). Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters. Physical Review B, 87(12): 125308, pp. 1-7. doi:10.1103/PhysRevB.87.125308.

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 Creators:
Pfanner, Gernot1, Author           
Freysoldt, Christoph1, Author           
Neugebauer, Jörg2, Author           
Inam, Fakhar3, Author           
Drabold, D. A.3, Author           
Jarolimek, Karol4, Author           
Zeman, M.4, Author           
Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
3Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA, persistent22              
4PVMD/DIMES, Delft University of Technology, 2600 GA Delft, The Netherlands, persistent22              

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Language(s): eng - English
 Dates: 2013-03-12
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 670848
DOI: 10.1103/PhysRevB.87.125308
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 87 (12) Sequence Number: 125308 Start / End Page: 1 - 7 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008