English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells

Marquardt, O., Hickel, T., & Neugebauer, J. (2013). Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells. Applied Physics Letters, 103(7), 073115-1-073115-4. doi:10.1063/1.4818752.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-2606-8 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-2608-4
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Marquardt, O.1, Author              
Hickel, T.2, Author              
Neugebauer, J.3, Author              
Affiliations:
1External Organizations, ou_persistent22              
2Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

Content

show

Details

show
hide
Language(s): eng - English
 Dates: 2013
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 670855
DOI: 10.1063/1.4818752
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Applied Physics Letters
  Alternative Title : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 103 (7) Sequence Number: - Start / End Page: 073115-1 - 073115-4 Identifier: -